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SLOTTED PHOTOINTERRUPTER
Description
The MIT-5A116-U consists of a Gallium Arsenide infrared emitting diode and a NPN silicon phototransistor built in a black plastic housing . It is a transmissive subminiature photointerrupter.
2 14.00(.551) 0.50 0.10 (.020.004) 5.00 0.20 B A (.197.008) 1
MIT-5A116-U
Package Dimensions
4
3
0.50 0.10 (.020.004)
10.00(.394)
2.50(.098)
0.70(.028)
Features
l l l l l
(.146.008)
3.70 0.20
B'
A'
For- direct pc board Dual - in - line socket mounting Fast switching speed Choice of mounting configuration.
A-A' SECTION 2.54 NOM (.100)
0.50TYP (.020)
(.394)
Non -contact switching
10.00MIN
7.50 0.30 (.295.012)
9.00 0.30 (.406.012) 2- 0.70 0.10 (.028004) 2.35 0.10 (.038.004) 6.60 0.10 (.260.004) (.205.004) 5.20 0.10 1.00(.040) MIN B-B' SECTION
2.54 (.100)
1.50(.059)
1.70 (.067)
0.90 (.035)
6.00 (.236)
5.20(.205)
NOTE
1. Tolerance is 0.25 mm (.006") unless otherwise noted.
Absolute Maximum Ratings
@TA =25oC Parameter Continuous Forward Current INPUT Reverse Voltage Power Dissipation Collector-emitter breakdown voltage OUTPUT Emitter-Collector breakdown voltage Collector power dissipation Total power dissipation Operating Temperature Range Storage Temperature Range Symbol IF VR Pad V(BR)CEO V(BR)ECO PC PTOT Topr Tstg Maximum Rating 50 5 75 30 5 75 100 -25 C to + 85 C -40oC to + 100oC
o o
Unit mA V mW V V mW mW
Unity Opto Technology Co., Ltd.
04/01/2002
0.70 (.027)
6.00 0.10 (.236.004)
MIT-5A116-U
Optical-Electrical Characteristics
Parameter Input Output Forward Voltage Reverse Current symbol VF IR Min. 0.4 Typ. 1.2 20 20 Max. 1.4 10 100 0.4 4 100 100 Unit. V nA V mA S S @TA =25oC Test Conditions IF =20mA Vce =10V Ic=0.1mA,Ee=0.1mW/cm2 IF =20mA, Vce =5V Ic=100A, Vce =5V RL =1k, d =1mm
A VR =5V
Collector Dark Current Iceo Collector Emitter Saturation Voltage VCE(SAT) Collector Current Ic (on) tr tf
Transfer Cha- Response Time (RISE) racteristics Response Time (FALL)
Typical Optical-Electrical Characteristic Curves
Forward Current IF (mA)
50 40 30 20 10 0 -25 0 25 50 75 100
Power Dissipation (mW)
60
120 100 80 60 40 20 0 -25 0 25 50 75 100 PD , PC PTOT
Ambient Temperature TA Fig.1 forward Current VS. Ambient Temperature Forward Current IF (mA) Collector Current Ic (A)
100 80 60 40 20 0 0.8 1.2 1.6 2.0 2.4 2.8 700 600 500 400 300 200 100 0 0
Ambient Temperature TA (oC ) Fig.2 Power Dissipation vs Ambient Temperature
Vce=2V Ta=25o C
5
10
15
20
25
30
Collector Current Ic (A)
700 600 500 400 300 200 100 0 0
Relative Collector Current (%)
Forward Voltage VF (V) Fig.3 Forward Current VS Forward Voltage
Ta=25o C 20mA
Forward Current IF (mA) Fig.4 Collector Current vs Forward Voltage
120 100 80 60 40 20 0 -25 0 25 50 75 100
IF=15mA 10mA 4mA
2
4
6
8
10
12
Collector-Emitter Voltage Vce (V) Fig.5 Collector Current vs. Vce
Ambient Temperature TA ( oC ) Fig.6 Relative Collector Current VS. TA
Unity Opto Technology Co., Ltd.
04/01/2002
MIT-5A116-U
Typical Optical-Electrical Characteristic Curves
Collector Dark Current ICEO
10-6 10
-7
1000
Response Time (s)
VCE=20V
100 10 1
V CE =2V I C =100mA Ta=25 o C
4
10-8 10-9 10-10 0
Ambient Temperature TA (o C ) Fig.7 Collector Dark Current vs. Ambient Temperature
25
50
75
100
0.1 0.01
0.1
1
10
100
Load Resistance Rt (K) Fig.8 Response Time vs. Load Resistance
100
Relative Sensitivity (%)
Ta=25 o C
Response Time Measurement Circuit
80 60 40 20 0 700 Input Input Output tr
90 % 10 %
t t tf IL VR Output VCC
800
900
1000
1100
1200
Wavelength (nm) Fig.9 Spectral Sensitivity (Detecting side)
Sensing Position Characteristics (Typical)
X Y
I F =20mA V CE =5V I F =20mA V CE =5V Ta=25 o C
Relative light current IL (%)
100
Ta=25 o C
(Center of optical axis) 50 X Y 0 0 -2 -1 0 +1 +2 (mm) -2 -1 0 +1 +2 (mm) 0 + +
Distance d (mm)
Unity Opto Technology Co., Ltd.
04/01/2002

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